BSZ0901NSI

MOSFET N-CH 30V 40A TSDSON
BSZ0901NSI P1
BSZ0901NSI P1
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Infineon Technologies ~ BSZ0901NSI

Part Number
BSZ0901NSI
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 30V 40A TSDSON
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- BSZ0901NSI PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number BSZ0901NSI
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 25A (Ta), 40A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 15V
Vgs (Max) ±20V
FET Feature Schottky Diode (Body)
Power Dissipation (Max) 2.1W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs 2.1 mOhm @ 20A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TSDSON-8-FL
Package / Case 8-PowerTDFN

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