BSO615NGHUMA1

MOSFET 2N-CH 60V 2.6A 8SOIC
BSO615NGHUMA1 P1
BSO615NGHUMA1 P1
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Infineon Technologies ~ BSO615NGHUMA1

Part Number
BSO615NGHUMA1
Manufacturer
Infineon Technologies
Description
MOSFET 2N-CH 60V 2.6A 8SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- BSO615NGHUMA1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Arrays
  • In Stock : 147724 pcs
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Product Parameter

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Part Number BSO615NGHUMA1
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 2.6A
Rds On (Max) @ Id, Vgs 150 mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 25V
Power - Max 2W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package PG-DSO-8

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