BSC123N08NS3GATMA1

MOSFET N-CH 80V 55A TDSON-8
BSC123N08NS3GATMA1 P1
BSC123N08NS3GATMA1 P1
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Infineon Technologies ~ BSC123N08NS3GATMA1

Part Number
BSC123N08NS3GATMA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 80V 55A TDSON-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- BSC123N08NS3GATMA1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 110000 pcs
  • Reference Price : submit a request

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Product Parameter

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Part Number BSC123N08NS3GATMA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 11A (Ta), 55A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 6V, 10V
Vgs(th) (Max) @ Id 3.5V @ 33µA
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1870pF @ 40V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 66W (Tc)
Rds On (Max) @ Id, Vgs 12.3 mOhm @ 33A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8
Package / Case 8-PowerTDFN

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