Images are for reference only.
See Product Specifications for product details.
| Part Number | BAV116HWFQ-7 |
|---|---|
| Part Status | Active |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 85V |
| Current - Average Rectified (Io) | 215mA (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.25V @ 150mA |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 3µs |
| Current - Reverse Leakage @ Vr | 5nA @ 75V |
| Capacitance @ Vr, F | 2pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | SOD-123F |
| Supplier Device Package | SOD-123F |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
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BAV100-GS08 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 250MA SOD80 | - | 2500 | Details |
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BAV100-GS18 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 250MA SOD80 | - | 0 | Details |
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BAV101 L0G | Taiwan Semiconductor Corporation | DIODE GP 250V 200MA MINIMELF | - | 2421329 | Details |
|
BAV101 L1G | Taiwan Semiconductor Corporation | DIODE GP 250V 200MA MINIMELF | - | 2656723 | Details |
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BAV101-GS08 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 250MA SOD80 | - | 0 | Details |
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BAV101-GS18 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 250MA SOD80 | - | 0 | Details |
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BAV102 | Fairchild/ON Semiconductor | DIODE GEN PURP 150V 200MA LL34 | - | 5000 | Details |
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BAV102,115 | Nexperia USA Inc. | DIODE GEN PURP 150V 250MA LLDS | 0 | Details | |
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BAV102,135 | Nexperia USA Inc. | DIODE GEN PURP 150V 250MA LLDS | 0 | Details | |
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BAV102-GS08 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 250MA SOD80 | - | 5000 | Details |
 |
BAV102-GS18 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 150V 250MA SOD80 | - | 0 | Details |
 |
BAV102-TP | Micro Commercial Co | DIODE GEN 150V 200MA MINI MELF | - | 0 | Details |