SQJ410EP-T1_GE3

MOSFET N-CH 30V 32A POWERPAKSO-8
SQJ410EP-T1_GE3 P1
SQJ410EP-T1_GE3 P1
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Vishay Siliconix ~ SQJ410EP-T1_GE3

Part Number
SQJ410EP-T1_GE3
Manufacturer
Vishay Siliconix
Description
MOSFET N-CH 30V 32A POWERPAKSO-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SQJ410EP-T1_GE3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 52266 pcs
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Product Parameter

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Part Number SQJ410EP-T1_GE3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.9 mOhm @ 10.3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6210pF @ 15V
FET Feature -
Power Dissipation (Max) 83W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8

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