SIJA52ADP-T1-GE3

MOSFET N-CH 40V PPAK SO-8L
SIJA52ADP-T1-GE3 P1
SIJA52ADP-T1-GE3 P1
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Vishay Siliconix ~ SIJA52ADP-T1-GE3

Part Number
SIJA52ADP-T1-GE3
Manufacturer
Vishay Siliconix
Description
MOSFET N-CH 40V PPAK SO-8L
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SIJA52ADP-T1-GE3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 100146 pcs
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Product Parameter

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Part Number SIJA52ADP-T1-GE3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 41.6A (Ta), 131A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.63 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 5500pF @ 20V
FET Feature -
Power Dissipation (Max) 4.8W (Ta), 48W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8

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