SIHA2N80E-GE3

MOSFET N-CHAN 800V TO-220 FULLPA
SIHA2N80E-GE3 P1
SIHA2N80E-GE3 P1
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Vishay Siliconix ~ SIHA2N80E-GE3

Part Number
SIHA2N80E-GE3
Manufacturer
Vishay Siliconix
Description
MOSFET N-CHAN 800V TO-220 FULLPA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SIHA2N80E-GE3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 75155 pcs
  • Reference Price : submit a request

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Product Parameter

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Part Number SIHA2N80E-GE3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.75 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19.6nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 315pF @ 100V
FET Feature -
Power Dissipation (Max) 29W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220 Full Pack
Package / Case TO-220-3 Full Pack

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