SIDR402DP-T1-GE3

MOSFET N-CHAN 40V PPSO-8DC
SIDR402DP-T1-GE3 P1
SIDR402DP-T1-GE3 P1
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Vishay Siliconix ~ SIDR402DP-T1-GE3

Part Number
SIDR402DP-T1-GE3
Manufacturer
Vishay Siliconix
Description
MOSFET N-CHAN 40V PPSO-8DC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SIDR402DP-T1-GE3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 50457 pcs
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Product Parameter

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Part Number SIDR402DP-T1-GE3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 64.6A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.88 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 165nC @ 10V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 9100pF @ 20V
FET Feature -
Power Dissipation (Max) 6.25W (Ta), 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8DC
Package / Case PowerPAK® SO-8

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