SIA413DJ-T1-GE3

MOSFET P-CH 12V 12A SC70-6
SIA413DJ-T1-GE3 P1
SIA413DJ-T1-GE3 P1
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Vishay Siliconix ~ SIA413DJ-T1-GE3

Part Number
SIA413DJ-T1-GE3
Manufacturer
Vishay Siliconix
Description
MOSFET P-CH 12V 12A SC70-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SIA413DJ-T1-GE3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 15000 pcs
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Product Parameter

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Part Number SIA413DJ-T1-GE3
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 1.5V, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 57nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 10V
Vgs (Max) ±8V
FET Feature -
Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
Rds On (Max) @ Id, Vgs 29 mOhm @ 6.7A, 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SC-70-6 Single
Package / Case PowerPAK® SC-70-6

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