Images are for reference only.
See Product Specifications for product details.
| Part Number | SI8805EDB-T2-E1 |
|---|---|
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 8V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Drive Voltage (Max Rds On,Min Rds On) | 1.2V, 4.5V |
| Vgs(th) (Max) @ Id | 700mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Vgs (Max) | ±5V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Rds On (Max) @ Id, Vgs | 68 mOhm @ 1.5A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 4-Microfoot |
| Package / Case | 4-XFBGA |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
SI8800EDB-T2-E1 | Vishay Siliconix | MOSFET N-CH 20V MICROFOOT | - | 60000 | Details |
 |
SI8802DB-T2-E1 | Vishay Siliconix | MOSFET N-CH 8V MICROFOOT | - | 33000 | Details |
 |
SI8805EDB-T2-E1 | Vishay Siliconix | MOSFET P-CH 8V MICROFOOT | - | 6000 | Details |
 |
SI8806DB-T2-E1 | Vishay Siliconix | MOSFET N-CH 12V MICROFOOT | 0 | Details | |
 |
SI8808DB-T2-E1 | Vishay Siliconix | MOSFET N-CH 30V MICROFOOT | - | 12000 | Details |
 |
SI8809EDB-T2-E1 | Vishay Siliconix | MOSFET P-CH 20V 1.9A MICROFOOT | - | 0 | Details |