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See Product Specifications for product details.
| Part Number | SI7850DP-T1-E3 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 6.2A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Rds On (Max) @ Id, Vgs | 22 mOhm @ 10.3A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
| Package / Case | PowerPAK® SO-8 |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
SI7850ADP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 60V POWERPAK SO-8 | - | 110174 | Details |
 |
SI7850DP-T1-E3 | Vishay Siliconix | MOSFET N-CH 60V 6.2A PPAK SO-8 | - | 45000 | Details |
 |
SI7850DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 60V 6.2A PPAK SO-8 | - | 0 | Details |
 |
SI7852ADP-T1-E3 | Vishay Siliconix | MOSFET N-CH 80V 30A PPAK SO-8 | - | 0 | Details |
 |
SI7852ADP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 80V 30A PPAK SO-8 | - | 9000 | Details |
 |
SI7852DP-T1-E3 | Vishay Siliconix | MOSFET N-CH 80V 7.6A PPAK SO-8 | - | 0 | Details |
 |
SI7852DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 80V 7.6A PPAK SO-8 | - | 0 | Details |
 |
SI7856ADP-T1-E3 | Vishay Siliconix | MOSFET N-CH 30V 15A PPAK SO-8 | - | 0 | Details |
 |
SI7856ADP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 15A PPAK SO-8 | - | 0 | Details |
 |
SI7858ADP-T1-E3 | Vishay Siliconix | MOSFET N-CH 12V 20A PPAK SO-8 | - | 3000 | Details |
 |
SI7858ADP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 12V 20A PPAK SO-8 | - | 6000 | Details |
 |
SI7858BDP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 12V 40A PPAK SO-8 | - | 0 | Details |