SI4931DY-T1-E3

MOSFET 2P-CH 12V 6.7A 8-SOIC
SI4931DY-T1-E3 P1
SI4931DY-T1-E3 P1
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Vishay Siliconix ~ SI4931DY-T1-E3

Part Number
SI4931DY-T1-E3
Manufacturer
Vishay Siliconix
Description
MOSFET 2P-CH 12V 6.7A 8-SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SI4931DY-T1-E3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Arrays
  • In Stock : 32500 pcs
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Product Parameter

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Part Number SI4931DY-T1-E3
Part Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 6.7A
Rds On (Max) @ Id, Vgs 18 mOhm @ 8.9A, 4.5V
Vgs(th) (Max) @ Id 1V @ 350µA
Gate Charge (Qg) (Max) @ Vgs 52nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 1.1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO

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