SI4164DY-T1-GE3

MOSFET N-CH 30V 30A 8-SOIC
SI4164DY-T1-GE3 P1
SI4164DY-T1-GE3 P1
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Vishay Siliconix ~ SI4164DY-T1-GE3

Part Number
SI4164DY-T1-GE3
Manufacturer
Vishay Siliconix
Description
MOSFET N-CH 30V 30A 8-SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SI4164DY-T1-GE3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 17500 pcs
  • Reference Price : submit a request

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Product Parameter

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Part Number SI4164DY-T1-GE3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3545pF @ 15V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 3W (Ta), 6W (Tc)
Rds On (Max) @ Id, Vgs 3.2 mOhm @ 15A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)

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