SI2315BDS-T1-E3

MOSFET P-CH 12V 3A SOT23-3
SI2315BDS-T1-E3 P1
SI2315BDS-T1-E3 P1
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Vishay Siliconix ~ SI2315BDS-T1-E3

Part Number
SI2315BDS-T1-E3
Manufacturer
Vishay Siliconix
Description
MOSFET P-CH 12V 3A SOT23-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SI2315BDS-T1-E3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 99000 pcs
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Product Parameter

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Part Number SI2315BDS-T1-E3
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 1.8V, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 715pF @ 6V
Vgs (Max) ±8V
FET Feature -
Power Dissipation (Max) 750mW (Ta)
Rds On (Max) @ Id, Vgs 50 mOhm @ 3.85A, 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3

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