Images are for reference only.
See Product Specifications for product details.
| Part Number | 1N4150W-E3-08 |
|---|---|
| Part Status | Active |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 50V |
| Current - Average Rectified (Io) | 200mA |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 200mA |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 4ns |
| Current - Reverse Leakage @ Vr | 100nA @ 50V |
| Capacitance @ Vr, F | 2.5pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | SOD-123 |
| Supplier Device Package | SOD-123 |
| Operating Temperature - Junction | 150°C (Max) |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
1N4150 | Fairchild/ON Semiconductor | DIODE GEN PURP 50V 200MA DO35 | 0 | Details | |
 |
1N4150 TR | Central Semiconductor Corp | DIODE GEN PURP 50V 200MA DO35 | - | 20000 | Details |
 |
1N4150-1 | Microsemi Corporation | DIODE GEN PURP 50V 200MA DO35 | - | 829 | Details |
 |
1N4150TAP | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 150MA DO35 | - | 0 | Details |
 |
1N4150TR | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 300MA DO35 | - | 0 | Details |
 |
1N4150TR_S00Z | ON Semiconductor | DIODE GEN PURP 50V 200MA DO35 | - | 10006 | Details |
 |
1N4150UR-1 | Microsemi Corporation | DIODE GEN PURP 50V 200MA DO213AA | - | 75 | Details |
|
1N4150UR-1/TR | Microsemi Corporation | SWITCHING | - | 32 | Details |
 |
1N4150W-E3-08 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 200MA SOD123 | - | 25073 | Details |
 |
1N4150W-E3-18 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 200MA SOD123 | - | 20000 | Details |
 |
1N4150W-G3-08 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 200MA SOD123 | - | 0 | Details |
 |
1N4150W-G3-18 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 200MA SOD123 | - | 0 | Details |