Images are for reference only.
See Product Specifications for product details.
| Part Number | TP65H050WS |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Rds On (Max) @ Id, Vgs | 60 mOhm @ 22A, 10V |
| Vgs(th) (Max) @ Id | 4.8V @ 700µA |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 400V |
| FET Feature | - |
| Power Dissipation (Max) | 119W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
|
TP65H035WS | Transphorm | GANFET N-CH 650V 46.5A TO247-3 | - | 3382 | Details |
|
TP65H035WSQA | Transphorm | GANFET N-CH 650V 47A TO247-3 | - | 3026 | Details |
|
TP65H050WS | Transphorm | GANFET N-CH 650V 34A TO247-3 | - | 4067 | Details |