Images are for reference only.
See Product Specifications for product details.
| Part Number | TPC8012-H(TE12L,Q) |
|---|---|
| Part Status | Discontinued at Digi-Key |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 440pF @ 10V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Rds On (Max) @ Id, Vgs | 400 mOhm @ 900mA, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOP (5.5x6.0) |
| Package / Case | 8-SOIC (0.173", 4.40mm Width) |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
TPC8012-H(TE12L,Q) | Toshiba Semiconductor and Storage | MOSFET N-CH 200V 1.8A 8-SOP | - | 0 | Details |
 |
TPC8014(TE12L,Q,M) | Toshiba Semiconductor and Storage | MOSFET N-CH 30V 11A SOP8 2-6J1B | 0 | Details | |
 |
TPC8018-H(TE12LQM) | Toshiba Semiconductor and Storage | MOSFET N-CH 30V 18A SOP8 2-6J1B | 0 | Details |