Images are for reference only.
See Product Specifications for product details.
| Part Number | SSM6K781G,LF |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 1.5V, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 5.4nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 600pF @ 6V |
| Vgs (Max) | ±8V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta) |
| Rds On (Max) @ Id, Vgs | 18 mOhm @ 1.5A, 4.5V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-WCSPC (1.5x1.0) |
| Package / Case | 6-UFBGA, WLCSP |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
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SSM6322ACPZ-R7 | Analog Devices Inc. | IC AUDIO AMP DUAL CHAN 24LFCSP | 9000 | Details | |
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SSM6322ACPZ-RL | Analog Devices Inc. | IC AUDIO AMP DUAL CHAN 24LFCSP | 35000 | Details | |
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SSM6J207FE,LF | Toshiba Semiconductor and Storage | MOSFET P-CH 30V 1.4A ES6 | - | 0 | Details |
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SSM6J212FE,LF | Toshiba Semiconductor and Storage | MOSFET P-CH 20V 4A ES6 | - | 0 | Details |
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SSM6J213FE(TE85L,F | Toshiba Semiconductor and Storage | MOSFET P CH 20V 2.6A ES6 | - | 4000 | Details |
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SSM6J214FE(TE85L,F | Toshiba Semiconductor and Storage | X34 SMALL LOW ON RESISTANCE PCH | - | 623675 | Details |
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SSM6J215FE(TE85L,F | Toshiba Semiconductor and Storage | MOSFET P CH 20V 3.4A ES6 | - | 12000 | Details |
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SSM6J216FE,LF | Toshiba Semiconductor and Storage | MOSFET P-CHANNEL 12V 4.8A ES6 | - | 498940 | Details |
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SSM6J409TU(TE85L,F | Toshiba Semiconductor and Storage | MOSFET P-CH 20V 9.5A UF6 | - | 0 | Details |