Images are for reference only.
See Product Specifications for product details.
| Part Number | SSM6J206FE(TE85L,F |
|---|---|
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V, 4V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 335pF @ 10V |
| Vgs (Max) | ±8V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Rds On (Max) @ Id, Vgs | 130 mOhm @ 1A, 4V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | ES6 (1.6x1.6) |
| Package / Case | SOT-563, SOT-666 |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
SSM6J206FE(TE85L,F | Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2A ES6 | 4000 | Details | |
 |
SSM6J207FE,LF | Toshiba Semiconductor and Storage | MOSFET P-CH 30V 1.4A ES6 | - | 0 | Details |
 |
SSM6J212FE,LF | Toshiba Semiconductor and Storage | MOSFET P-CH 20V 4A ES6 | - | 0 | Details |
 |
SSM6J213FE(TE85L,F | Toshiba Semiconductor and Storage | MOSFET P CH 20V 2.6A ES6 | - | 4000 | Details |
 |
SSM6J214FE(TE85L,F | Toshiba Semiconductor and Storage | X34 SMALL LOW ON RESISTANCE PCH | - | 623675 | Details |
 |
SSM6J215FE(TE85L,F | Toshiba Semiconductor and Storage | MOSFET P CH 20V 3.4A ES6 | - | 12000 | Details |
 |
SSM6J216FE,LF | Toshiba Semiconductor and Storage | MOSFET P-CHANNEL 12V 4.8A ES6 | - | 498940 | Details |