STU13N65M2

MOSFET N-CH 650V 10A IPAK
STU13N65M2 P1
STU13N65M2 P1
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STMicroelectronics ~ STU13N65M2

Part Number
STU13N65M2
Manufacturer
STMicroelectronics
Description
MOSFET N-CH 650V 10A IPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- STU13N65M2 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 2710 pcs
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Product Parameter

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Part Number STU13N65M2
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 590pF @ 100V
Vgs (Max) ±25V
FET Feature -
Power Dissipation (Max) 110W (Tc)
Rds On (Max) @ Id, Vgs 430 mOhm @ 5A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package IPAK (TO-251)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA

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