STI11NM60ND

MOSFET N-CH 600V 10A I2PAK
STI11NM60ND P1
STI11NM60ND P1
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STMicroelectronics ~ STI11NM60ND

Part Number
STI11NM60ND
Manufacturer
STMicroelectronics
Description
MOSFET N-CH 600V 10A I2PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- STI11NM60ND PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number STI11NM60ND
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 850pF @ 50V
Vgs (Max) ±25V
FET Feature -
Power Dissipation (Max) 90W (Tc)
Rds On (Max) @ Id, Vgs 450 mOhm @ 5A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA

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