NP23N06YDG-E1-AY

MOSFET N-CH 60V 23A 8HSON
NP23N06YDG-E1-AY P1
NP23N06YDG-E1-AY P1
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Renesas Electronics America ~ NP23N06YDG-E1-AY

Part Number
NP23N06YDG-E1-AY
Manufacturer
Renesas Electronics America
Description
MOSFET N-CH 60V 23A 8HSON
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- NP23N06YDG-E1-AY PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number NP23N06YDG-E1-AY
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 23A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 5V, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 1W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs 27 mOhm @ 11.5A, 10V
Operating Temperature 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-HSON
Package / Case 8-SMD, Flat Lead Exposed Pad

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