NID9N05ACLT4G

MOSFET N-CH 52V 9A LL DPAK-3
NID9N05ACLT4G P1
NID9N05ACLT4G P1
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ON Semiconductor ~ NID9N05ACLT4G

Part Number
NID9N05ACLT4G
Manufacturer
ON Semiconductor
Description
MOSFET N-CH 52V 9A LL DPAK-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- NID9N05ACLT4G PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number NID9N05ACLT4G
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 52V
Current - Continuous Drain (Id) @ 25°C 9A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 3V, 12V
Vgs(th) (Max) @ Id 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 40V
Vgs (Max) ±15V
FET Feature -
Power Dissipation (Max) 1.74W (Ta)
Rds On (Max) @ Id, Vgs 90 mOhm @ 9A, 12V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

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