MJD112-1G

TRANS NPN DARL 100V 2A IPAK
MJD112-1G P1
MJD112-1G P1
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ON Semiconductor ~ MJD112-1G

Part Number
MJD112-1G
Manufacturer
ON Semiconductor
Description
TRANS NPN DARL 100V 2A IPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- MJD112-1G PDF online browsing
Family
Transistors - Bipolar (BJT) - Single
  • In Stock : 2698 pcs
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Product Parameter

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Part Number MJD112-1G
Part Status Active
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 2A
Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A
Current - Collector Cutoff (Max) 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 2A, 3V
Power - Max 1.75W
Frequency - Transition 25MHz
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package I-Pak

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