FQA9N90-F109

MOSFET N-CH 900V 8.6A TO-3P
FQA9N90-F109 P1
FQA9N90-F109 P1
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ON Semiconductor ~ FQA9N90-F109

Part Number
FQA9N90-F109
Manufacturer
ON Semiconductor
Description
MOSFET N-CH 900V 8.6A TO-3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- FQA9N90-F109 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 24935 pcs
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Product Parameter

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Part Number FQA9N90-F109
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900V
Current - Continuous Drain (Id) @ 25°C 8.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.3 Ohm @ 4.3A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 25V
FET Feature -
Power Dissipation (Max) 240W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3PN
Package / Case TO-3P-3, SC-65-3

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