PDTB113ES,126

TRANS PREBIAS PNP 500MW TO92-3
PDTB113ES,126 P1
PDTB113ES,126 P2
PDTB113ES,126 P1
PDTB113ES,126 P2
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NXP USA Inc. ~ PDTB113ES,126

Part Number
PDTB113ES,126
Manufacturer
NXP USA Inc.
Description
TRANS PREBIAS PNP 500MW TO92-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
PDTB113ES,126.pdf PDTB113ES,126 PDF online browsing
Family
Transistors - Bipolar (BJT) - Single, Pre-Biased
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Product Parameter

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Part Number PDTB113ES,126
Part Status Obsolete
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 500mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 1k
Resistor - Emitter Base (R2) (Ohms) 1k
DC Current Gain (hFE) (Min) @ Ic, Vce 33 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition -
Power - Max 500mW
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3

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