Images are for reference only.
See Product Specifications for product details.
| Part Number | BSP220,115 |
|---|---|
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 225mA (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 90pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Rds On (Max) @ Id, Vgs | 12 Ohm @ 200mA, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-223 |
| Package / Case | TO-261-4, TO-261AA |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
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BSP220,115 | Nexperia USA Inc. | MOSFET P-CH 200V 0.225A SOT223 | 4000 | Details | |
 |
BSP225,115 | Nexperia USA Inc. | MOSFET P-CH 250V 0.225A SOT223 | 3000 | Details | |
 |
BSP230,135 | Nexperia USA Inc. | MOSFET P-CH 300V 0.21A SOT223 | 4000 | Details | |
 |
BSP250,115 | Nexperia USA Inc. | MOSFET P-CH 30V 3A SOT223 | 0 | Details | |
 |
BSP250,135 | Nexperia USA Inc. | MOSFET P-CH 30V 3A SOT223 | 0 | Details | |
 |
BSP254A,126 | NXP USA Inc. | MOSFET P-CH 250V 0.2A SOT54 | 0 | Details | |
 |
BSP295E6327 | Infineon Technologies | MOSFET N-CH 60V 1.8A SOT223 | - | 0 | Details |
 |
BSP295E6327T | Infineon Technologies | MOSFET N-CH 60V 1.8A SOT223 | - | 0 | Details |
 |
BSP295H6327XTSA1 | Infineon Technologies | MOSFET N-CH 60V 1.8A SOT223 | 14000 | Details | |
 |
BSP295L6327HTSA1 | Infineon Technologies | MOSFET N-CH 60V 1.8A SOT-223 | - | 0 | Details |
 |
BSP296 E6433 | Infineon Technologies | MOSFET N-CH 100V 1.1A SOT-223 | 0 | Details | |
 |
BSP296E6327 | Infineon Technologies | MOSFET N-CH 100V 1.1A SOT223 | 0 | Details |