EDB4432BBBJ-1DAAT-F-D

IC DRAM 4G PARALLEL 533MHZ
EDB4432BBBJ-1DAAT-F-D P1
EDB4432BBBJ-1DAAT-F-D P1
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Micron Technology Inc. ~ EDB4432BBBJ-1DAAT-F-D

Part Number
EDB4432BBBJ-1DAAT-F-D
Manufacturer
Micron Technology Inc.
Description
IC DRAM 4G PARALLEL 533MHZ
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
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Family
Memory
  • In Stock : 5523 pcs
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Product Parameter

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Part Number EDB4432BBBJ-1DAAT-F-D
Part Status Active
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - Mobile LPDDR2
Memory Size 4Gb (128M x 32)
Clock Frequency 533MHz
Write Cycle Time - Word, Page -
Access Time -
Memory Interface Parallel
Voltage - Supply 1.14V ~ 1.95V
Operating Temperature -40°C ~ 105°C (TC)
Mounting Type -
Package / Case -
Supplier Device Package -

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