IRG7CH37K10EF

IGBT CHIP WAFER
IRG7CH37K10EF P1
IRG7CH37K10EF P1
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Infineon Technologies ~ IRG7CH37K10EF

Part Number
IRG7CH37K10EF
Manufacturer
Infineon Technologies
Description
IGBT CHIP WAFER
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IRG7CH37K10EF.pdf IRG7CH37K10EF PDF online browsing
Family
Transistors - IGBTs - Single
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Product Parameter

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Part Number IRG7CH37K10EF
Part Status Active
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 15A
Current - Collector Pulsed (Icm) -
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 15A
Power - Max -
Switching Energy -
Input Type Standard
Gate Charge 80nC
Td (on/off) @ 25°C 28ns/122ns
Test Condition 600V, 15A, 10 Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die

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