IRFH5010TR2PBF

MOSFET N-CH 100V 13A 5X6 PQFN
IRFH5010TR2PBF P1
IRFH5010TR2PBF P1
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Infineon Technologies ~ IRFH5010TR2PBF

Part Number
IRFH5010TR2PBF
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 100V 13A 5X6 PQFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IRFH5010TR2PBF.pdf IRFH5010TR2PBF PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number IRFH5010TR2PBF
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 13A (Ta), 100A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 4340pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 3.6W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs 9 mOhm @ 50A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PQFN (5x6)
Package / Case 8-PowerVDFN

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