IPS65R1K5CEAKMA1

MOSFET N-CH 650V TO-251-3
IPS65R1K5CEAKMA1 P1
IPS65R1K5CEAKMA1 P1
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Infineon Technologies ~ IPS65R1K5CEAKMA1

Part Number
IPS65R1K5CEAKMA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 650V TO-251-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IPS65R1K5CEAKMA1.pdf IPS65R1K5CEAKMA1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 3076 pcs
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Product Parameter

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Part Number IPS65R1K5CEAKMA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 3.1A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 10.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 225pF @ 100V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 28W (Tc)
Rds On (Max) @ Id, Vgs 1.5 Ohm @ 1A, 10V
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-251
Package / Case TO-251-3 Stub Leads, IPak

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