IPP60R299CPXKSA1

MOSFET N-CH 650V 11A TO-220
IPP60R299CPXKSA1 P1
IPP60R299CPXKSA1 P1
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Infineon Technologies ~ IPP60R299CPXKSA1

Part Number
IPP60R299CPXKSA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 650V 11A TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- IPP60R299CPXKSA1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 6341 pcs
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Product Parameter

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Part Number IPP60R299CPXKSA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 100V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 96W (Tc)
Rds On (Max) @ Id, Vgs 299 mOhm @ 6.6A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO-220-3
Package / Case TO-220-3

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