Images are for reference only.
See Product Specifications for product details.
| Part Number | IPB042N10N3 G |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 6V, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 150µA |
| Gate Charge (Qg) (Max) @ Vgs | 117nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 8410pF @ 50V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 214W (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2 mOhm @ 50A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-3 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
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IPB041N04NGATMA1 | Infineon Technologies | MOSFET N-CH 40V 80A TO263-3 | 0 | Details | |
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IPB042N03L G | Infineon Technologies | MOSFET N-CH 30V 70A TO-263-3 | - | 1000 | Details |
 |
IPB042N03LGATMA1 | Infineon Technologies | MOSFET N-CH 30V 70A TO-263-3 | - | 84655 | Details |
 |
IPB042N10N3 G | Infineon Technologies | MOSFET N-CH 100V 100A TO263-3 | - | 6979 | Details |
 |
IPB042N10N3GATMA1 | Infineon Technologies | MOSFET N-CH 100V 100A TO263-3 | - | 44044 | Details |
 |
IPB042N10N3GE8187ATMA1 | Infineon Technologies | MOSFET N-CH 100V 100A TO263-3 | - | 0 | Details |
 |
IPB044N15N5ATMA1 | Infineon Technologies | MV POWER MOS | 0 | Details | |
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IPB048N06LGATMA1 | Infineon Technologies | MOSFET N-CH 60V 100A TO-263 | 0 | Details | |
|
IPB048N15N5ATMA1 | Infineon Technologies | MV POWER MOS | 0 | Details | |
|
IPB048N15N5LFATMA1 | Infineon Technologies | DIFFERENTIATED MOSFETS | - | 0 | Details |
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IPB049N06L3GATMA1 | Infineon Technologies | MOSFET N-CH 60V 80A TO263-3 | 0 | Details | |
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IPB049N08N5ATMA1 | Infineon Technologies | MOSFET N-CH 80V TO263-3 | 0 | Details |