IGB03N120H2ATMA1

IGBT 1200V 9.6A 62.5W TO263-3
IGB03N120H2ATMA1 P1
IGB03N120H2ATMA1 P1
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Infineon Technologies ~ IGB03N120H2ATMA1

Part Number
IGB03N120H2ATMA1
Manufacturer
Infineon Technologies
Description
IGBT 1200V 9.6A 62.5W TO263-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- IGB03N120H2ATMA1 PDF online browsing
Family
Transistors - IGBTs - Single
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Product Parameter

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Part Number IGB03N120H2ATMA1
Part Status Not For New Designs
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 9.6A
Current - Collector Pulsed (Icm) 9.9A
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 3A
Power - Max 62.5W
Switching Energy 290µJ
Input Type Standard
Gate Charge 22nC
Td (on/off) @ 25°C 9.2ns/281ns
Test Condition 800V, 3A, 82 Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package PG-TO263-3

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