Images are for reference only.
See Product Specifications for product details.
| Part Number | BSP298H6327XUSA1 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 400V |
| Current - Continuous Drain (Id) @ 25°C | 500mA (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta) |
| Rds On (Max) @ Id, Vgs | 3 Ohm @ 500mA, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | - |
| Supplier Device Package | PG-SOT223-4 |
| Package / Case | TO-261-4, TO-261AA |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
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BSP298 E6327 | Infineon Technologies | MOSFET N-CH 400V 500MA SOT-223 | 0 | Details | |
 |
BSP298H6327XUSA1 | Infineon Technologies | MOSFET N-CH 400V 500MA SOT-223 | 4000 | Details | |
 |
BSP298L6327HUSA1 | Infineon Technologies | MOSFET N-CH 400V 500MA SOT-223 | 0 | Details |