BSF083N03LQ G

MOSFET N-CH 30V 53A MG-WDSON-2
BSF083N03LQ G P1
BSF083N03LQ G P1
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Infineon Technologies ~ BSF083N03LQ G

Part Number
BSF083N03LQ G
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 30V 53A MG-WDSON-2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
BSF083N03LQ G.pdf BSF083N03LQ G PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number BSF083N03LQ G
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 13A (Ta), 53A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 15V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 2.2W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs 8.3 mOhm @ 20A, 10V
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package MG-WDSON-2, CanPAK M™
Package / Case 3-WDSON

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