BSC100N06LS3GATMA1

MOSFET N-CH 60V 50A TDSON-8
BSC100N06LS3GATMA1 P1
BSC100N06LS3GATMA1 P1
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Infineon Technologies ~ BSC100N06LS3GATMA1

Part Number
BSC100N06LS3GATMA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 60V 50A TDSON-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- BSC100N06LS3GATMA1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 35000 pcs
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Product Parameter

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Part Number BSC100N06LS3GATMA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 50A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2.2V @ 23µA
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3500pF @ 30V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs 10 mOhm @ 50A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8
Package / Case 8-PowerTDFN

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