Images are for reference only.
See Product Specifications for product details.
| Part Number | BSC050NE2LSATMA1 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 39A (Ta), 58A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 5 mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10.4nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 760pF @ 12V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 28W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TDSON-8 |
| Package / Case | 8-PowerTDFN |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
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BSC0500NSIATMA1 | Infineon Technologies | MOSFET N-CH 30V 35A TDSON-8 | 0 | Details | |
 |
BSC0501NSIATMA1 | Infineon Technologies | MOSFET N-CH 30V 29A 8TDSON | 0 | Details | |
 |
BSC0502NSIATMA1 | Infineon Technologies | MOSFET N-CH 30V 26A TDSON-8 | 0 | Details | |
 |
BSC0503NSIATMA1 | Infineon Technologies | MOSFET N-CH 30V 22A TDSON-8 | 0 | Details | |
 |
BSC0504NSIATMA1 | Infineon Technologies | MOSFET N-CH 30V 21A TDSON-8 | 0 | Details | |
 |
BSC050N03LS G | Infineon Technologies | MOSFET N-CH 30V 80A TDSON-8 | - | 60000 | Details |
 |
BSC050N03LSGATMA1 | Infineon Technologies | MOSFET N-CH 30V 80A TDSON-8 | - | 61066 | Details |
 |
BSC050N03MSGATMA1 | Infineon Technologies | MOSFET N-CH 30V 80A TDSON-8 | - | 5000 | Details |
 |
BSC050N04LSGATMA1 | Infineon Technologies | MOSFET N-CH 40V 85A TDSON-8 | - | 20000 | Details |
 |
BSC050N10NS5ATMA1 | Infineon Technologies | TRENCH 100V | - | 50505 | Details |
 |
BSC050NE2LS | Infineon Technologies | MOSFET N-CH 25V 39A TDSON-8 | - | 85000 | Details |
 |
BSC050NE2LSATMA1 | Infineon Technologies | MOSFET N-CH 25V 39A TDSON-8 | - | 160485 | Details |