BSB044N08NN3GXUMA1

MOSFET N-CH 80V 18A WDSON-2
BSB044N08NN3GXUMA1 P1
BSB044N08NN3GXUMA1 P1
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Infineon Technologies ~ BSB044N08NN3GXUMA1

Part Number
BSB044N08NN3GXUMA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 80V 18A WDSON-2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- BSB044N08NN3GXUMA1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 45024 pcs
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Product Parameter

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Part Number BSB044N08NN3GXUMA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 18A (Ta), 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.4 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 3.5V @ 97µA
Gate Charge (Qg) (Max) @ Vgs 73nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5700pF @ 40V
FET Feature -
Power Dissipation (Max) 2.2W (Ta), 78W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package MG-WDSON-2, CanPAK M™
Package / Case 3-WDSON

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