BSB015N04NX3GXUMA1

MOSFET N-CH 40V 180A 2WDSON
BSB015N04NX3GXUMA1 P1
BSB015N04NX3GXUMA1 P1
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Infineon Technologies ~ BSB015N04NX3GXUMA1

Part Number
BSB015N04NX3GXUMA1
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 40V 180A 2WDSON
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- BSB015N04NX3GXUMA1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 43071 pcs
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Product Parameter

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Part Number BSB015N04NX3GXUMA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 36A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.5 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 142nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 12000pF @ 20V
FET Feature -
Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package MG-WDSON-2, CanPAK M™
Package / Case 3-WDSON

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