Images are for reference only.
See Product Specifications for product details.
| Part Number | BAS21E6327HTSA1 |
|---|---|
| Part Status | Last Time Buy |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 200V |
| Current - Average Rectified (Io) | 250mA (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.25V @ 200mA |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50ns |
| Current - Reverse Leakage @ Vr | 100nA @ 200V |
| Capacitance @ Vr, F | 5pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | PG-SOT23-3 |
| Operating Temperature - Junction | 150°C (Max) |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
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BAS21 | Fairchild/ON Semiconductor | DIODE GEN PURP 250V 200MA SOT23 | - | 72000 | Details |
 |
BAS21 RFG | Taiwan Semiconductor Corporation | DIODE GEN PURP 250V 200MA SOT23 | - | 1742332 | Details |
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BAS21,215 | Nexperia USA Inc. | DIODE GEN PURP 200V 200MA SOT23 | 21000 | Details | |
 |
BAS21,235 | Nexperia USA Inc. | DIODE GEN PURP 200V 200MA SOT23 | 0 | Details | |
 |
BAS21-7 | Diodes Incorporated | DIODE GEN PURP 200V 200MA SOT23 | - | 0 | Details |
 |
BAS21-7-F | Diodes Incorporated | DIODE GEN PURP 200V 200MA SOT23 | - | 45000 | Details |
 |
BAS21-E3-08 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 200MA SOT23 | - | 21000 | Details |
 |
BAS21-E3-18 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 200MA SOT23 | - | 0 | Details |
 |
BAS21-G3-08 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 200MA SOT23 | - | 0 | Details |
 |
BAS21-G3-18 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 200MA SOT23 | - | 0 | Details |
 |
BAS21-HE3-08 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 200MA SOT23 | - | 0 | Details |
 |
BAS21-HE3-18 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 200MA SOT23 | - | 0 | Details |