MSRTA20060(A)D

DIODE GEN PURP 600V 200A 3 TOWER
MSRTA20060(A)D P1
MSRTA20060(A)D P1
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GeneSiC Semiconductor ~ MSRTA20060(A)D

Part Number
MSRTA20060(A)D
Manufacturer
GeneSiC Semiconductor
Description
DIODE GEN PURP 600V 200A 3 TOWER
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
MSRTA20060(A)D.pdf MSRTA20060(A)D PDF online browsing
Family
Diodes - Rectifiers - Arrays
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Product Parameter

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Part Number MSRTA20060(A)D
Part Status Active
Diode Configuration 1 Pair Series Connection
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 600V
Current - Average Rectified (Io) (per Diode) 200A
Voltage - Forward (Vf) (Max) @ If 1.1V @ 200A
Speed Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) -
Current - Reverse Leakage @ Vr 10µA @ 600V
Operating Temperature - Junction -55°C ~ 150°C
Mounting Type Chassis Mount
Package / Case Three Tower
Supplier Device Package Three Tower

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