GB01SLT12-252

DIODE SILICON 1.2KV 1A TO252
GB01SLT12-252 P1
GB01SLT12-252 P1
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GeneSiC Semiconductor ~ GB01SLT12-252

Part Number
GB01SLT12-252
Manufacturer
GeneSiC Semiconductor
Description
DIODE SILICON 1.2KV 1A TO252
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
GB01SLT12-252.pdf GB01SLT12-252 PDF online browsing
Family
Diodes - Rectifiers - Single
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Product Parameter

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Part Number GB01SLT12-252
Part Status Active
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 1200V
Current - Average Rectified (Io) 1A
Voltage - Forward (Vf) (Max) @ If 1.8V @ 1A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0ns
Current - Reverse Leakage @ Vr 2µA @ 1200V
Capacitance @ Vr, F 69pF @ 1V, 1MHz
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-252
Operating Temperature - Junction -55°C ~ 175°C

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