RFD12N06RLESM9A

MOSFET N-CH 60V 18A DPAK
RFD12N06RLESM9A P1
RFD12N06RLESM9A P2
RFD12N06RLESM9A P1
RFD12N06RLESM9A P2
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Fairchild/ON Semiconductor ~ RFD12N06RLESM9A

Part Number
RFD12N06RLESM9A
Manufacturer
Fairchild/ON Semiconductor
Description
MOSFET N-CH 60V 18A DPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- RFD12N06RLESM9A PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 10000 pcs
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Product Parameter

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Part Number RFD12N06RLESM9A
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 485pF @ 25V
Vgs (Max) ±16V
FET Feature -
Power Dissipation (Max) 49W (Tc)
Rds On (Max) @ Id, Vgs 63 mOhm @ 18A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

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