DMTH10H010LCTB-13

MOSFET BVDSS: 61V 100V TO263 T&R
DMTH10H010LCTB-13 P1
DMTH10H010LCTB-13 P1
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Diodes Incorporated ~ DMTH10H010LCTB-13

Part Number
DMTH10H010LCTB-13
Manufacturer
Diodes Incorporated
Description
MOSFET BVDSS: 61V 100V TO263 T&R
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- DMTH10H010LCTB-13 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 2400 pcs
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Product Parameter

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Part Number DMTH10H010LCTB-13
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 108A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 53.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2592pF @ 50V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 2.4W (Ta), 166W (Tc)
Rds On (Max) @ Id, Vgs 9.5 mOhm @ 13A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3

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