DMN3007LSSQ-13

MOSFET BVDSS: 25V 30V SO-8
DMN3007LSSQ-13 P1
DMN3007LSSQ-13 P1
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Diodes Incorporated ~ DMN3007LSSQ-13

Part Number
DMN3007LSSQ-13
Manufacturer
Diodes Incorporated
Description
MOSFET BVDSS: 25V 30V SO-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
DMN3007LSSQ-13.pdf DMN3007LSSQ-13 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number DMN3007LSSQ-13
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 16A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 64.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2714pF @ 15V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 2.5W
Rds On (Max) @ Id, Vgs 7 mOhm @ 15A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)

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