Images are for reference only.
See Product Specifications for product details.
| Part Number | CDBGBSC20650-G |
|---|---|
| Part Status | Active |
| Diode Configuration | 1 Pair Common Cathode |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650V |
| Current - Average Rectified (Io) (per Diode) | 33A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.7V @ 10A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0ns |
| Current - Reverse Leakage @ Vr | 100µA @ 650V |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
|
CDBGBSC101200-G | Comchip Technology | DIODE DUAL SILICON CARBIDE POWER | - | 9432 | Details |
|
CDBGBSC201200-G | Comchip Technology | DIODE DUAL SILICON CARBIDE POWER | - | 4851 | Details |
|
CDBGBSC20650-G | Comchip Technology | DIODE DUAL SILICON CARBIDE POWER | - | 12870 | Details |