NESG7030M04-A

DISCRETE RF DIODE
NESG7030M04-A P1
NESG7030M04-A P2
NESG7030M04-A P1
NESG7030M04-A P2
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CEL ~ NESG7030M04-A

Part Number
NESG7030M04-A
Manufacturer
CEL
Description
DISCRETE RF DIODE
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
NESG7030M04-A.pdf NESG7030M04-A PDF online browsing
Family
Transistors - Bipolar (BJT) - RF
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Product Parameter

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Part Number NESG7030M04-A
Part Status Obsolete
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 4.3V
Frequency - Transition 5.8GHz
Noise Figure (dB Typ @ f) 0.5dB ~ 0.75dB @ 2GHz ~ 5.8GHz
Gain 14dB ~ 21dB
Power - Max 125mW
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 5mA, 2V
Current - Collector (Ic) (Max) 30mA
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-343F
Supplier Device Package M04

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