VP2206N3-G-P003

MOSFET P-CH 60V 640MA TO92-3
VP2206N3-G-P003 P1
VP2206N3-G-P003 P1
Images are for reference only.
See Product Specifications for product details.

Microchip Technology ~ VP2206N3-G-P003

Part Number
VP2206N3-G-P003
Manufacturer
Microchip Technology
Description
MOSFET P-CH 60V 640MA TO92-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- VP2206N3-G-P003 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 0 pcs
  • Reference Price : submit a request

Submit a Request For Quotation on quantities greater than those displayed.

Product Parameter

All Products

Part Number VP2206N3-G-P003
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 640mA (Tj)
Drive Voltage (Max Rds On,Min Rds On) 5V, 10V
Vgs(th) (Max) @ Id 3.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 450pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 740mW (Tc)
Rds On (Max) @ Id, Vgs 900 mOhm @ 3.5A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-92-3
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Related Products

All Products