AOB12N60FDL

MOSFET N-CH 600V 12A TO263
AOB12N60FDL P1
AOB12N60FDL P1
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Alpha & Omega Semiconductor Inc. ~ AOB12N60FDL

Part Number
AOB12N60FDL
Manufacturer
Alpha & Omega Semiconductor Inc.
Description
MOSFET N-CH 600V 12A TO263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
AOB12N60FDL.pdf AOB12N60FDL PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number AOB12N60FDL
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2010pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 278W (Tc)
Rds On (Max) @ Id, Vgs 650 mOhm @ 6A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D²Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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